1/8 may 2001 IRFP450 n-channel 500v - 0.31 w - 14a to-247 powermesh?ii mosfet n typical r ds (on) = 0.31 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns switching speed, gate charge and ruggedness. applications n switch mode power supplies (smps) n high current, high speed switching n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d IRFP450 500v < 0.38 w 14 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (r gs = 20 k w ) 500 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 14 a i d drain current (continuos) at t c = 100c 8.7 a i dm ( l ) drain current (pulsed) 56 a p tot total dissipation at t c = 25c 190 w derating factor 1.5 w/c dv/dt(1) peak diode recovery voltage slope 3.5 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 14a, di/dt 100a/s, v dd v (br)dss , t j t jmax. to-247 1 2 3 internal schematic diagram
IRFP450 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.66 c/w rthj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 14 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 800 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 7a 0.31 0.38 w symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds > i d(on) x r ds(on)max, i d =7a 13 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 2000 pf c oss output capacitance 300 pf c rss reverse transfer capacitance 43 pf
3/8 IRFP450 safe operating area thermal impedance electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250v, i d = 7 a r g = 4.7 w , v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 23 ns q g total gate charge v dd = 400v, i d = 14 a, v gs = 10v, r g =4.7 w 75 90 nc q gs gate-source charge 10 nc q gd gate-drain charge 38 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 14 a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 25 ns t f fall time 30 ns t c cross-over time 62 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 14 a i sdm (2) source-drain current (pulsed) 56 a v sd (1) forward on voltage i sd = 14 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 14 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 670 ns q rr reverse recovery charge 6.7 c i rrm reverse recovery current 20 a
IRFP450 4/8 capacitance variations gate charge vs gate-source voltage transfer characteristics static drain-source on resistance transconductance output characteristics
5/8 IRFP450 normalized on resistance vs temperature source-drain diode forward characteristics normalized gate thereshold voltage vs temp.
IRFP450 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
IRFP450 7/8 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5 o5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
IRFP450 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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